![]() However, focusing only on reducing S S MIN is insufficient. The minimum point subthreshold swing ( S S MIN) was 5 mV/decade in and 11 mV/decade in. ![]() The task of reducing the SS has drawn considerable attention and many studies have been conducted in this regard. Consequently, TFETs have a low I OFF and can achieve a sub-60 mV/decade SS. This implies that the flow of drain current in n-channel-TFET occurs through tunnelling of charge carriers from the valence band of the source to the conduction band of the channel region. By contrast, TFETs provide a steeper SS, a lower OFF-state current ( I OFF) and a lower supply voltage compared to conventional MOSFETs and are suitable for low-power applications.Īs mentioned, TFETs are based on BTBT conduction mechanism. However, I-MOS is not suitable for low-power applications owing to its high breakdown voltage. Therefore, both these transistors have attracted considerable research interest. Owing to their conduction mechanisms, such as impact ionization and band-to-band tunnelling (BTBT), differing from that of conventional MOSFETs, the ionization MOS (I-MOS), which is based on impact ionization, and tunnelling field-effect transistor (TFET), which is based on BTBT, can achieve the SS, lower than 60 mV/decade. To overcome this problem, researchers have been studying devices with a steep SS. This limitation prevents the supply voltage from being reduced at the same pace as the scaling of the physical dimensions of semiconductor devices. However, in conventional metal-oxide-semiconductor field-effect transistors (MOSFETs), subthreshold swing (SS) is limited to 60 mV/decade ( SS = ( kT / q ) × ln 10) at room temperature. Decreasing the supply voltage is an effective way to reduce power consumption. In the scaling of semiconductor devices to the nanoscale regime in accordance with Moore’s law, power consumption is one of the major impediments. Owing to rapid advances in semiconductor device technology, fifth-generation communication devices, wearable devices, Internet of Things, and numerous information technology devices have been developed. The GAS GAA TFET has high potential for use in low-power applications. The optimised GAS GAA TFET exhibited a high ON-state current ( I ON) (11.9 μA), a low OFF-state current ( I OFF) ( 2.85 × 10 − 9 μA), and a low and steady S S AVG (57.29 mV/decade), with the OFF-state current increasing by 10 7 times. The GAS GAA TFET was optimised through work function and drain overlapping engineering. At this moment, germanium could still supply current increment, resulting in a steady and steep average subthreshold swing ( S S AVG ) and a higher ON-state current. ![]() With an increase in the gate-source voltage, band-to-band tunnelling (BTBT) in silicon rapidly approached saturation since germanium has a higher BTBT probability than silicon. The GAS GAA TFET contains a combination of around-source germanium and silicon, which have different bandgaps. Furthermore, the electrical characteristics were optimised using Synopsys Sentaurus technology computer-aided design (TCAD). The electrical characteristics of the device were studied and compared with those of silicon gate-all-around and germanium-based-source gate-all-around tunnel field-effect transistors. This paper presents a germanium-around-source gate-all-around tunnelling field-effect transistor (GAS GAA TFET). ![]()
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